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Lumière, nanomatériaux, nanotechnologies - CNRS ERL7004

Lumière, nanomatériaux, nanotechnologies - CNRS ERL7004

3 Projects, page 1 of 1
  • Funder: ANR Project Code: ANR-20-COVI-0080
    Funder Contribution: 199,680 EUR

    The world is currently facing a pandemic of a new emerging virus from the coronavirus family named COVID-19. Detection of infected patients is crucial to break the epidemic situation. As a consequence it is essential to diagnose fast and in large number populations to sort rapidly those who are infected. Diagnosis of COVID-19 is carried out by a molecular biology approach consisting in the detection of the COVID-19 RNA genome by a quantitative RT-PCR approach. This strategy is efficient but is time consuming and needs a trained medical staff in a dedicated laboratory. Here we propose a new strategy based on physics technologies :acoustic and optical. AcOstoVIe project aims to prototype a label-free COVID-19 diagnosis device, based by on 2 biosensors on a same quartz substrate. A Quartz Crystal Microbalance (QCM) and an optical reflexion – existing technologies already tested for ebola virus diagnosis – will be integrated in a sytem to detect COVID-19 (i) RNA genome (ii) viral particles and (iii) serology of infected patients. Compared to existing technologies, AcOstoVIe project will provide the valuable advantages : (i) point-of-care diagnosis, (ii) faster (< 30 min), (iii) friendly user (no trained medical staff), (iv) nomad without restriction of dedicated laboratory localization, (v) double check detection, (vi) partly reusable. From the Proof of Concept delivered after T0+12, the system will be next challenged with infectious and non-infectious sample fluids issued from collaborations with medical infrastructures and virology laboratories. The final compact system will be next co-design with practitioners.

  • Funder: ANR Project Code: ANR-20-CE30-0033
    Funder Contribution: 659,985 EUR

    The ambition of QUENOT is to overcome several current conceptual and experimental limits in nanooptics using the quantum properties of fast electrons. Indeed, certain key concepts and quantities in nanooptics (super-chirality, spatial coherence of excitations in optical nanostructures and quantum optics of photonic excitations) have been very sparsely studied at their relevant scale: the sub-wavelength scale. Super-chirality, that is to say, the increase of the chiral properties of light beyond those reached by purely circularly polarized light, can be observed theoretically in the vicinity of chiral nanostructures. The nanoscale mapping of super-chirality, which has never been done before, would allow the development of new biological sensors with greatly increased enantiomeric selectivity, with obvious implications in the pharmaceutical industry. Spatial coherence of confined excitations such as surface plasmons can be quantified through a quantity called cross-electromagnetic density (CDOS). The latter has at the moment been measured only in a narrow spectral range. Its measurement at the nanoscale and over a wide spectral range would shed light on the spatial coherence of excitations such as surface plasmons in random films, the nature of which remains controversial in the community. Finally, if the study of single photon emitters coupled to cavities has already been carried out, the study of quantum properties (creation and manipulation of Fock states) of nanostructured cavities (like cavities in photon gap materials) has never been considered theoretically or experimentally and would represent a major breakthrough in the field of quantum nanooptics. The use of fast electrons (about half the speed of light) as provided by Transmission Electron Microscopy (TEM) has been an impressive success over the last 15 years for the study of nanooptics at scales much smaller than the visible and infra-red wavelengths. The consortium members have been instrumental in this success. However, the study of the physical properties mentioned above is largely considered as unachievable by TEM techniques. The founding idea of QUENOT is that the quantum properties of fast electrons, long thought to be difficult to manipulate from a theoretical and experimental point of view, make it possible to retrieve, at the nanoscale, the measurement of super-chirality, CDOS, as well as the preparation and measurement of Fock states in photonic nanostructures. We intend to lift these conceptual and technical locks through a consortium combining theoretical and experimental expertises in nano-optics, advanced nanofabrication and instrumentation in electronic optics. Although the challenge is important, a number of very recent advances in the field, as well as preliminary theoretical and experimental studies, support us in the idea that it can be raised now and specifically by our consortium. QUENOT should keep France at the forefront of nanoptic research with fast electrons; in addition, the culture of some members of the consortium to provide access to their experiments will make these advances directly available to the community. QUENOT should impact the above-mentioned nanooptic fields. Beyond this, all the methods and concepts developed in this context can be directly used in the more general context of condensed matter, with for example the measurement of magnetic dichroism at the atomic scale or the measurement of coherence length of phonons.

  • Funder: ANR Project Code: ANR-21-CE05-0005
    Funder Contribution: 504,411 EUR

    Power microelectronics associated with high-efficiency electrical conversion systems are essential to reduce the energy consumption. Nevertheless, power microelectronics and electrical conversion circuits are still considered as disjointed disciplines during the design process. This results in very heterogeneous hybrid integration in which, on the one hand, a large number of dipole semiconductor chips and, on the other hand, an increasingly complex electrical circuit. To create a design leap, we have found that the integration perimeter of the power switching cell, basic brick, didn’t evolve and constitutes the major challenge that has to be overcome in order to shift towards a new paradigm that would give us the opportunity to project ourselves into levels of integration and performance that mark a sharp break with the classical hybrid integration approaches. The scientific ambition of our project, including Ampère, L2n, Laas and Laplace labs, is to demonstrate the relevance of a new design perimeter for power switching cells through a monolithic vertical integration approach on a multi-terminal power chip with Wide-Band Gap material such as 4H silicon carbide (SiC). This proposed ultimate integration assumes the ability to co-integrate the switches within a single chip or on a few number of chips. This constraint implies mutualizing as many crystalline regions as possible within the volume and metal layers on the surface. Consequently, the chip has to sustain voltage both vertically and laterally. This major feature clearly represents the scientific and technological challenge that we want to take up by a double and original vision combining new innovative component architectures and new specific technological processes. If this challenge is about to be overcome in silicon technology, it is not the case in silicon carbide technology because this type of carbonaceous substrate is of great mechanical hardness and makes it difficult to realize isolated deep trenches in thick SiC substrate that must be filled with an insulator. In addition, in the high gap energy of silicon carbide it is difficult to diffuse the doping impurities and also complex to carry out localized or buried P+ type ionic implantation. This does not allow the realization of bipolar components such as IGBT or PIN diode as easily as in silicon. As a consequence, a reconsideration of architectures making use quasi-only of vertical unipolar switch diode architecture within the context of a full integration of switching cells on SiC chips is therefore mandatory to circumvent these difficulties. Conceptually, the main challenge that will be overcome by this project is the vertical co-integration on a SiC substrate of at least two specified 1.2kV-25A switches in a multi-terminal single chip configuration, which will be studied in T1 by physical simulation and modelling, including in T2 new and innovative technological steps, then evaluated experimentally in T3. Three prototypes are targeted as project milestones: A) first basic integration of JBS Diode/JBS Diode 3-terminal SiC single chip using new vertical isolated deep trenches, B) application for integration of VDMOSFET/VDMOSFET 3-terminal SiC single chip in two variants, C) extended integration for VDMOSFET/JBS Diode 3-terminal SiC single chip, in two variants, using new vertical isolated deep trenches, and innovative embedded metallic vias. All chips will be laterally isolated by deep trenches using either plasma etching technique or photo-electrochemical process that will be developed and processed thus creating an elementary and generic switching cell or half-cell. Innovative steps will be designed to be compatible with industrial capability SiC VDMOS process flow / production chain to facilitate their valorization. Future 3-terminal chips, will be the basic functions of future conversion systems with very high integration and high energy efficiency requirements.


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